The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Oct. 01, 2020
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Takahiro Kudo, Kyoto, JP;

Yoshimitsu Odajima, Osaka, JP;

Yohsuke Mitani, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02J 7/34 (2006.01); H02J 7/00 (2006.01); H02J 50/05 (2016.01); G05F 3/26 (2006.01); H01L 29/866 (2006.01); H02J 7/02 (2016.01); H02M 3/338 (2006.01);
U.S. Cl.
CPC ...
H02J 7/345 (2013.01); G05F 3/26 (2013.01); H01L 29/866 (2013.01); H02J 7/00 (2013.01); H02J 7/025 (2013.01); H02J 50/05 (2016.02); H02M 3/3385 (2013.01);
Abstract

A method for controlling a discharge of a power storage device includes: a first step of discharging, in a first section of a discharging period, a part of an electric charge stored in a power storage through a first discharge path and a second discharge path of a discharge circuit; and a second step of discharging, in a second section of the discharging period, a remaining part of the electric charge through the second discharge path. The first discharge path includes a zener diode connected to one end of the power storage. The second discharge path includes a first transistor connected to the one end of the power storage. The first section is a period in which a voltage of the one end of the power storage is higher than a breakdown voltage of the zener diode. The second section is a period in which a voltage of the one end of the power storage is lower than the breakdown voltage of the zener diode. An output current of the first transistor in the second section is greater than an output current of the first transistor in the first section.


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