The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Mar. 09, 2020
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Weiping Li, Pleasanton, CA (US);

Arnaud Laflaquière, Singapore, SG;

Xiaolong Fang, Fremont, CA (US);

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/042 (2006.01); H01S 5/187 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01S 5/187 (2013.01); H01S 5/04253 (2019.08); H01S 5/04254 (2019.08); H01S 5/04256 (2019.08); H01S 5/18341 (2013.01); H01S 5/18344 (2013.01);
Abstract

An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.


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