The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Mar. 29, 2019
Applicant:

Osaka Titanium Technologies Co., Ltd., Hyogo, JP;

Inventor:

Yusuke Kashitani, Amagasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/04 (2006.01); H01M 4/58 (2010.01); C01B 33/32 (2006.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01); H01M 4/36 (2006.01); H01M 4/1391 (2010.01); H01M 4/485 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/5825 (2013.01); C01B 33/32 (2013.01); H01M 4/04 (2013.01); H01M 4/0471 (2013.01); H01M 4/1391 (2013.01); H01M 4/366 (2013.01); H01M 4/485 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); C01P 2002/72 (2013.01); C01P 2004/80 (2013.01); C01P 2006/40 (2013.01); H01M 2004/027 (2013.01);
Abstract

To produce a silicon oxide-based negative electrode material containing Li and having uniform distribution of a Li concentration both inside particles and between particles although a C-coating film is formed on a surface, and yet in which generation of SiC is suppressed. A SiO gas and a Li gas are simultaneously generated by heating a Si-lithium silicate-containing raw material under reduced pressure. The Si-lithium silicate-containing raw material includes Si, Li, and O, in which a part of the Si is present as a Si simple substance and the Li is present as lithium silicate. By cooling the generated gases, Li-containing silicon oxide having an average composition of SiLiO(0.05<x<y and 0.5<y<1.5 are satisfied) is prepared. After adjusting the particle size, a C-coating film having an average film thickness of 0.5 to 10 nm is formed on a surface of particles at a treatment temperature of 900° C. or less.


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