The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Dec. 17, 2019
Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Koichi Takenaga, Tokushima, JP;

Takanori Fukumori, Tokushima, JP;

Satoshi Shichijo, Tokushima, JP;

Hiroki Fukuta, Anan, JP;

Kunihito Sugimoto, Anan, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 33/32 (2010.01); H01L 33/44 (2010.01); H01L 33/38 (2010.01); H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/56 (2010.01); H01L 33/40 (2010.01); H01L 33/64 (2010.01); H01L 27/15 (2006.01); H01L 33/20 (2010.01); H01L 25/075 (2006.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 27/153 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 33/647 (2013.01); H01L 25/0753 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A light emitting element includes a semiconductor stacked body, an insulating film, first and second electrodes, a second external connection portion, and first external connection portions. The first semiconductor layer is exposed at a plurality of exposed portions disposed in a plurality of rows in plan view. The first external connection portions include at least one smaller-size first external connection portion disposed between adjacent ones of the rows other than the outermost one of the rows, and at least one larger-size first external connection portion extending from the end region, in which a spacing between a first outer edge of a second semiconductor layer and the exposed portions in the outermost one of the rows is narrower than a spacing between the exposed portions in adjacent ones of the rows, to at least a position between the outermost one of the rows and an adjacent one of the rows.


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