The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Aug. 02, 2019
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Tatsuro Hiraki, Tokyo, JP;
Shinji Matsuo, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A semiconductor layer formed on a clad layer and a light absorbing layer formed on the semiconductor layer are provided. The semiconductor layer includes a p-type region and an n-type region. The p-type region, which is of p-type, is provided on a side of one side portion of the light absorbing layer in a direction perpendicular to a direction in which light is guided, and the n-type region, which is of n-type, is provided on a side of another side portion of the light absorbing layer in the direction perpendicular to the direction in which light is guided. A p-type contact layer, which is of p-type, is formed on the p-type region, and an n-type contact layer is formed on the n-type region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile