The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Feb. 25, 2020
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Raymond L. Kallaher, West Lafayette, IN (US);

Sergei V. Gronin, West Lafayette, IN (US);

Geoffrey C. Gardner, West Lafayette, IN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/02 (2006.01); H01L 27/18 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0669 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02603 (2013.01); H01L 27/18 (2013.01);
Abstract

A nanowire structure includes a substrate, a patterned mask layer, and a nanowire. The patterned mask layer includes an opening through which the substrate is exposed. Further, the patterned mask layer has a thermal conductivity greater than The nanowire is on the substrate in the opening of the patterned mask layer. By providing the patterned mask layer with a thermal conductivity greater than the patterned mask layer is able to maintain a temperature of the surface thereof to a desired level when the nanowire is provided. This prevents undesired parasitic growth on the patterned mask layer, thereby improving the performance of the nanowire structure.


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