The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Aug. 24, 2020
Kioxia Corporation, Minato-ku, JP;
Harumi Seki, Kawasaki, JP;
Yuichiro Mitani, Miuragun, JP;
Kioxia Corporation, Minato-ku, JP;
Abstract
A semiconductor memory device according to an embodiment includes: a semiconductor layer; a gate electrode layer; a first insulating layer provided between the semiconductor layer and the gate electrode layer, the first insulating layer containing silicon (Si), nitrogen (N), and fluorine (F), and the first insulating layer including a first region; a second insulating layer provided between the first insulating layer and the gate electrode layer; and a charge storage layer provided between the first insulating layer and the second insulating layer, the charge storage layer containing silicon (Si) and nitrogen (N), and the charge storage layer including a second region, in which a second atomic ratio (N/Si) in the second region is larger than a first atomic ratio (N/Si) in the first region, and in which a first fluorine concentration in the first region is higher than a second fluorine concentration in the second region.