The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Sep. 18, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yong-hoon Son, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed are semiconductor memory devices and methods of fabricating the same. The method including forming a mold structure by alternately stacking a plurality of first insulating layers and a plurality of second insulating layers on a substrate, patterning the mold structure to form a first trench that exposes a first inner sidewall of the mold structure, growing a vertical semiconductor layer in the first trench such that a vertical semiconductor layer covers the first inner sidewall, using the substrate as a seed to, patterning the mold structure to form a second trench that exposes a second inner sidewall of the mold structure, forming a plurality of recesses by selectively removing the second insulating layers from the mold structure through the second trench, and horizontally growing a plurality of horizontal semiconductor layers in corresponding recesses, using the vertical semiconductor layer as a seed may be provided.