The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Aug. 13, 2020
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Seung Hwan Kim, Icheon-si, KR;

Hyun Chul Seo, Icheon-si, KR;

Hyeong Seok Choi, Icheon-si, KR;

Shin Young Park, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02372 (2013.01);
Abstract

A semiconductor device includes: a lower structure; a redistribution insulating layer disposed over the lower structure; a redistribution conductive layer disposed over the redistribution insulating layer and electrically connected to a part of the lower structure, the redistribution conductive layer including a redistribution pad; and a protective layer covering the redistribution insulating layer and the redistribution conductive layer while leaving the redistribution pad exposed. The redistribution conductive layer includes a trench disposed adjacent to the redistribution pad, and a part of the protective layer fills the trench.


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