The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Oct. 16, 2020
Applicants:
Yuji Zhao, Chandler, AZ (US);
Houqiang Fu, Tempe, AZ (US);
Kai Fu, Tempe, AZ (US);
Inventors:
Assignee:
Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/30 (2006.01); H01L 23/58 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 21/324 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3006 (2013.01); H01L 21/3245 (2013.01); H01L 23/585 (2013.01); H01L 29/2003 (2013.01); H01L 29/66136 (2013.01); H01L 29/66204 (2013.01); H01L 29/861 (2013.01);
Abstract
A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.