The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Nov. 09, 2018
Applicant:

National Institute for Materials Science, Tsukuba, JP;

Inventors:

Jie Tang, Tsukuba, JP;

Jinshi Yuan, Tsukuba, JP;

Luchang Qin, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 9/02 (2006.01); H01J 1/304 (2006.01); C01B 32/914 (2017.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01J 1/304 (2013.01); C01B 32/914 (2017.08); H01J 9/025 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/16 (2013.01); C01P 2004/80 (2013.01); H01J 2201/30484 (2013.01); H01J 2209/0223 (2013.01);
Abstract

The purpose of the present invention is to provide an emitter that is made of hafnium carbide (HfC) and that releases electrons in a stable and highly efficient manner, a method for manufacturing the emitter, and an electron gun and electronic device in which the emitter is used. In this nanowire equipped emitter, the nanowires are made of hafnium carbide (HfC) single crystal, the longitudinal direction of the nanowires match the <100> crystal direction of the hafnium carbide single crystal, and the end part of the nanowires through which electrons are to be released comprise the (200) face and the {310} face of the hafnium carbide single crystal, with the (200) face being the center and the {311} faces surrounding the (200) face.


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