The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Dec. 20, 2019
Applicant:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Inventors:

Seyedmohammad SeyedzadehDelcheh, Bellevue, WA (US);

Steven Raasch, Boxborough, MA (US);

Assignee:

Advanced Micro Devices, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/07 (2006.01); G06F 11/10 (2006.01); G11C 11/409 (2006.01); G06F 13/16 (2006.01); G06F 9/30 (2018.01);
U.S. Cl.
CPC ...
G06F 11/076 (2013.01); G06F 9/30101 (2013.01); G06F 11/1044 (2013.01); G06F 13/1668 (2013.01); G11C 11/409 (2013.01);
Abstract

A method includes receiving a write request for writing incoming data to a target memory line and, in response to the write request, comparing the incoming data with existing data in the target memory line to determine a number of a first type of state transition. The method further includes, in response to determining that the number of the first type of state transition for the write request exceeds a threshold, prior to writing the incoming data to the target memory line, storing adjacent data from each of a set of memory lines adjacent to the target memory line, and after writing the incoming data to the target memory line, writing the stored data to the set of adjacent memory lines.


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