The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 2022

Filed:

Sep. 29, 2020
Applicant:

Samsung Sdi Co., Ltd., Yongin-si, KR;

Inventors:

Kyungsoo Moon, Suwon-si, KR;

Eunmi Kang, Suwon-si, KR;

Jaehyun Kim, Suwon-si, KR;

Jimin Kim, Suwon-si, KR;

Ran Namgung, Suwon-si, KR;

Changsoo Woo, Suwon-si, KR;

Hwansung Cheon, Suwon-si, KR;

Seungyong Chae, Suwon-si, KR;

Seung Han, Suwon-si, KR;

Assignee:

Samsung SDI Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); C07F 7/22 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0042 (2013.01); C07F 7/2224 (2013.01); H01L 21/0274 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01);
Abstract

Disclosed are a semiconductor photoresist composition including an organometallic compound including at least one selected from compounds represented by Chemical Formulae 1 to 3 and a solvent, and a method of forming patterns using the semiconductor photoresist composition on an etching-objective layer to form a photoresist layer, patterning the photoresist layer to form a photoresist pattern, and etching the etching-objective layer using the photoresist pattern as an etching mask.


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