The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Apr. 15, 2021
Hoya Corporation, Tokyo, JP;
HOYA CORPORATION, Tokyo, JP;
Abstract
A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.