The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2022
Filed:
Nov. 05, 2018
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/16 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C30B 25/14 (2006.01); C30B 35/00 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C23C 16/4412 (2013.01); C23C 16/52 (2013.01); C30B 25/14 (2013.01); C30B 35/005 (2013.01); H01L 21/0262 (2013.01);
Abstract
The amount of gas evacuation from a reaction chamber of an apparatus for manufacturing epitaxial wafers is controlled to any one of: a first amount of gas evacuation when an epitaxial film formation process is performed in the reaction chamber; a second amount of gas evacuation smaller than the first amount of gas evacuation when a gate valve is opened to load or unload a wafer between the reaction chamber and a wafer transfer chamber; and a third amount of gas evacuation larger than the first amount of gas evacuation until a purge process for a gas in the reaction chamber is completed after the epitaxial film formation process is completed in the reaction chamber.