The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

May. 07, 2019
Applicant:

Toppan Printing Co., Ltd., Tokyo, JP;

Inventors:

Fusao Takagi, Tokyo, JP;

Kiyotomo Nakamura, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/16 (2006.01); H05K 1/11 (2006.01); H01G 4/06 (2006.01); H01G 4/228 (2006.01); H01G 4/33 (2006.01); H01L 23/15 (2006.01); H05K 3/38 (2006.01); H05K 3/46 (2006.01); H01G 4/12 (2006.01); H01G 4/38 (2006.01); H01L 23/12 (2006.01); H01G 4/236 (2006.01); H01G 4/248 (2006.01); H05K 1/02 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
H05K 1/162 (2013.01); H01G 4/06 (2013.01); H01G 4/12 (2013.01); H01G 4/228 (2013.01); H01G 4/236 (2013.01); H01G 4/248 (2013.01); H01G 4/33 (2013.01); H01G 4/38 (2013.01); H01L 23/12 (2013.01); H01L 23/15 (2013.01); H05K 1/111 (2013.01); H05K 1/16 (2013.01); H05K 3/38 (2013.01); H05K 3/46 (2013.01); H05K 1/0231 (2013.01); H05K 1/18 (2013.01);
Abstract

An electronic component includes a glass base in which through holes are formed passing through both surfaces thereof; an insulating resin layer laminated on each of both surfaces of the glass base and including a copper plated layer formed therein; and a capacitor including a lower electrode formed on the copper plated layer, a dielectric layer laminated on the lower electrode, and an upper electrode laminated on the dielectric layer. In the electronic component, the upper electrode has a region that is parallel to the copper plated layer and is formed so as to be smaller than a region of the dielectric layer parallel to the surface of the copper plated layer or a region of the lower electrode parallel to the surface of the copper plated layer.


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