The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Apr. 27, 2018
Sony Corporation, Tokyo, JP;
Tatsushi Hamaguchi, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Susumu Sato, Kanagawa, JP;
Hiroshi Nakajima, Kanagawa, JP;
Masamichi Ito, Miyagi, JP;
Hidekazu Kawanishi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structurewhich includes a GaN-based compound semiconductor and in which a first compound semiconductor layer, an active layer, and a second compound semiconductor layerare stacked, and forming a concave mirror sectionon a first surface side of the first compound semiconductor layer; then (B) forming a photosensitive material layerover the second compound semiconductor layer; and thereafter (C) exposing the photosensitive material layerto light from the concave mirror section side through the stacked structure, to obtain a treatment mask layer including the photosensitive material layer, and then processing the second compound semiconductor layerby use of the treatment mask layer.