The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Jul. 20, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaeho Jung, Seoul, KR;
Kwangmin Park, Seoul, KR;
Jonguk Kim, Yongin-si, KR;
Dongsung Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of fabricating a variable resistance memory device that includes forming a plurality of memory cells on a substrate. Each of the plurality of memory cells in a switching device and a variable resistance pattern. A capping structure is formed that commonly covers lateral side surfaces of the plurality of memory cells. An insulating gapfill layer is formed that covers the capping structure and fills a region between adjacent memory cells of the plurality of memory cells. The forming of the capping structure includes forming a second capping layer including silicon oxide that covers the lateral side surfaces of the plurality of memory cells. At least a partial portion of the second capping layer is nitrided by performing a first decoupled plasma process to form a third capping layer that includes silicon oxynitride.