The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Dec. 16, 2020
Playnitride Display Co., Ltd., MiaoLi County, TW;
Yen-Chun Tseng, MiaoLi County, TW;
Tzu-Yang Lin, MiaoLi County, TW;
Jyun-De Wu, MiaoLi County, TW;
Yi-Chun Shih, MiaoLi County, TW;
PlayNitride Display Co., Ltd., MiaoLi County, TW;
Abstract
A micro semiconductor device, including a semiconductor structure, a current confinement layer, a first type electrode, and a second type electrode, is provided. The current confinement layer is disposed in the semiconductor structure. The current confinement layer includes an oxidized area and a non-oxidized area. The first type electrode and the second type electrode are both disposed on the current confinement layer. An orthographic projection of a part of the oxidized area on a bottom surface of the semiconductor structure away from the first type electrode and the second type electrode is located between an orthographic projection of the first type electrode on the bottom surface and an orthographic projection of the second type electrode on the bottom surface.