The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Oct. 21, 2020
Applicant:

Playnitride Display Co., Ltd., MiaoLi County, TW;

Inventors:

Tzu-Wen Wang, MiaoLi County, TW;

Hsin-Chiao Fang, MiaoLi County, TW;

Assignee:

PlayNitride Display Co., Ltd., MiaoLi County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/30 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/305 (2013.01); H01L 33/0008 (2013.01); H01L 33/62 (2013.01);
Abstract

A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.


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