The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Feb. 20, 2020
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Tomoya Sasago, Kawasaki, JP;
Yukihiro Kuroda, Inagi, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G06V 20/58 (2022.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); G06V 20/58 (2022.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14607 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); G06V 2201/07 (2022.01);
Abstract
A photoelectric conversion apparatus includes a first diode which is an avalanche multiplication-type and a second diode which is an avalanche multiplication-type formed within a semiconductor substrate, a first transistor forming a first quench element, and a second transistor forming a second quench element. The first transistor and the second transistor are disposed between the first diode and the second diode in a planar view. The first transistor and the second transistor are disposed in a common semiconductor well region formed within the semiconductor substrate.