The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Aug. 17, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sung-Yun Lee, Seongnam-si, KR;

Jae-Hoon Jang, Seongnam-si, KR;

Jae-Duk Lee, Seongnam-si, KR;

Joon-Hee Lee, Seongnam-si, KR;

Young-Jin Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/28 (2006.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/308 (2013.01); H01L 21/76837 (2013.01); H01L 27/11556 (2013.01); H01L 29/40117 (2019.08); H01L 27/11565 (2013.01);
Abstract

A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.


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