The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Oct. 14, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Daisuke Hirata, Tokyo, JP;
Akihisa Yamamoto, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 29/452 (2013.01); H01L 29/456 (2013.01); H01L 29/4916 (2013.01); H01L 2224/0215 (2013.01); H01L 2224/02125 (2013.01); H01L 2224/02141 (2013.01); H01L 2224/02145 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/051 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05096 (2013.01); H01L 2224/05188 (2013.01); H01L 2224/05191 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48453 (2013.01); H01L 2224/48463 (2013.01);
Abstract
A semiconductor apparatus including a bonding region in which a wire is bonded, includes: a semiconductor substrate; an oxide film provided on a principal surface of the semiconductor substrate in the bonding region; a polysilicon layer provided on the oxide film; an interlayer film partially provided on the polysilicon layer; a barrier metal directly provided on the polysilicon layer and the interlayer film; and an electrode provided on the barrier metal.