The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Jun. 09, 2020
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
The Trustees of Columbia University IN the City of New York, New York, NY (US);
Kevin R. Coffey, Oviedo, FL (US);
Edward Dein, Saint Cloud, FL (US);
Sameer Ezzat, Mosul, IQ;
Prabhu Doss Mani, Memphis, TN (US);
Katayun Barmak, Elmsford, NY (US);
University of Central Florida Research Founation, Inc., Orlando, FL (US);
The Trustees of Columbia University in the City of New York, New York, NY (US);
Abstract
Crystallographic orientations of ruthenium films and related methods are disclosed. Single crystal ruthenium films are provided with crystallographic orientations that arrange a c-axis of the ruthenium crystal structure in a direction that corresponds with a plane of the film or along a direction that corresponds with a surface of a substrate on which the film is formed. While ruthenium films typically form with the c-axis perpendicular to the surface of the substrate or as a polycrystalline film with a random crystallographic orientation, substrate surfaces may be configured with a crystallographic surface net that promotes non-perpendicular c-axis orientations of ruthenium. The substrate may be formed with a metal-terminated surface in certain arrangements. In this regard, ruthenium films may be configured as metallic interconnects for devices where directions of lowest electrical resistivity within the crystal structure are arranged to correspond with the direction of current flow in the devices.