The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Jan. 31, 2021
Nanya Technology Corporation, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The semiconductor structure includes a substrate, a deep well, a first doped region, a source/drain region, and a first heavily doped region. The substrate has a first conductivity type. The deep well has a second conductivity type disposed on the substrate. The first doped region has the first conductivity type disposed on the deep well. The source/drain region has the second conductivity type disposed on the first doped region. The first heavily doped region has the second conductivity type disposed in a first top region of the source/drain region, in which the first conductivity type is opposite to the second conductivity type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile