The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Aug. 07, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongsoo Lee, Suwon-si, KR;

Daehyun Kim, Suwon-si, KR;

Guyeon Wei, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 7/10 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 7/1039 (2013.01); G11C 16/0425 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract

A semiconductor device is provided. The device includes a memory that stores data in a non-volatile and volatile manner and a memory controller configured to control the memory. The memory includes a word line pair including a first and second word line, a first bit line pair orthogonal to the first and the second word line and including a first bit line and a first complementary bit line, and a memory cell pair including first and second memory cells adjacent to the first memory cell in a word line direction. A left node of the first memory cell, and a right node of the first memory cell and a left node of the second memory cell, are all connected to the first word line, and a value of the data stored in the memory cell pair in the non-volatile manner is determined according to the selected first word line.


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