The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2022

Filed:

Aug. 21, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yeonji Kim, Suwon-si, KR;

Youngdeok Seo, Seoul, KR;

Chanha Kim, Hwaseong-si, KR;

Kangho Roh, Seoul, KR;

Hyunkyo Oh, Yongin-si, KR;

Heewon Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06N 20/00 (2019.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0614 (2013.01); G06F 3/0652 (2013.01); G06F 3/0653 (2013.01); G06F 3/0658 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G06N 20/00 (2019.01);
Abstract

An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.


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