The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2022
Filed:
Feb. 03, 2021
Applicant:
Nanosys, Inc., Milpitas, CA (US);
Inventors:
Ravisubhash Tangirala, Fremont, CA (US);
Jay Yamanaga, Campbell, CA (US);
Wenzhou Guo, San Jose, CA (US);
Christopher Sunderland, San Jose, CA (US);
Ashenafi Damtew Mamuye, Milpitas, CA (US);
Chunming Wang, Milpitas, CA (US);
Eunhee Hwang, Suwon-si, KR;
Nahyoung Kim, Incheon, KR;
Assignee:
Nanosys, Inc., Milpitas, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); C09K 11/62 (2006.01); B32B 15/04 (2006.01); B32B 15/09 (2006.01); B32B 17/06 (2006.01); B29B 7/90 (2006.01); C08J 5/18 (2006.01); G02B 1/00 (2006.01); G02F 1/13357 (2006.01); G02F 1/1335 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
C09K 11/621 (2013.01); C08J 5/18 (2013.01); C09K 11/025 (2013.01); G02B 1/002 (2013.01); G02F 1/133603 (2013.01); G02F 1/133614 (2021.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C08J 2329/10 (2013.01); G02F 2202/36 (2013.01);
Abstract
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.