The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Dec. 10, 2018
Applicant:
Ams Ag, Premstaetten, AT;
Inventor:
Guy Meynants, Premstaetten, AT;
Assignee:
AMS AG, Premstätten, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 13/254 (2018.01); H04N 5/374 (2011.01); H04N 5/378 (2011.01); H04N 5/3745 (2011.01); G01B 11/25 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 13/254 (2018.05); G01B 11/2513 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01); H01L 27/14643 (2013.01);
Abstract
A photodetector in semiconductor material is provided with a first transfer gate between the photodetector and a first diffusion region in the semiconductor material, a second transfer gate between the photodetector and a second diffusion region in the semiconductor material, a capacitor connected between the first diffusion region and the second diffusion region, a first switch connected between the first diffusion region and a first reference voltage, and a second switch connected between the second diffusion region and a second reference voltage.