The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Dec. 11, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Takeshi Horiguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/10 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01); H03K 17/082 (2006.01); H02M 7/5387 (2007.01); H02P 27/08 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H02M 1/0009 (2021.05); H02M 1/0012 (2021.05); H03K 17/0828 (2013.01); H02M 7/53871 (2013.01); H02P 27/08 (2013.01); H03K 2017/0806 (2013.01);
Abstract

A drive circuit drives a power semiconductor element including a control terminal, a first main electrode, and a second main electrode. The drive circuit includes a first switching-off circuit and a second switching-off circuit each for turning off the power semiconductor element. The second switching-off circuit is lower in impedance than the first switching-off circuit. In a case where the power semiconductor element is turned off, only the first switching-off circuit operates when the power semiconductor element is in an unusual state, and the first switching-off circuit and the second switching-off circuit complementarily operate when the power semiconductor element is in a normal state.


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