The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Apr. 24, 2020
Applied Materials, Inc., Santa Clara, CA (US);
Milan Pe{hacek over (s)}ić, San Jose, CA (US);
Applied Materials, Inc, Santa Clara, CA (US);
Abstract
A crested barrier memory and selector device may include a first electrode, a first self-rectifying, tunneling layer having a first dielectric constant, and an active, barrier layer that has a second dielectric constant and another self-rectifying, tunneling layer having a third dielectric constant. The first self-rectifying layer may be between the first electrode and the active layer. The second dielectric constant may be at least 1.5 times larger than the first dielectric constant. The device may also include a second electrode, where the active, barrier layer is between the first self-rectifying, tunneling layer and the second electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile