The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Jul. 13, 2020
Anhui Sanan Optoelectronics Co., Ltd., Wuhu, CN;
Dongsheng Bi, Wuhu, CN;
Kai Xu, Wuhu, CN;
Chia-Hao Tsai, Wuhu, CN;
Chao-Ming Huang, Wuhu, CN;
Chia-Hao Chang, Wuhu, CN;
ANHUI SANAN OPTOELECTRONICS CO., LTD., Wuhu, CN;
Abstract
The present application relates to the field of semiconductor, especially the Light-Emitting Diode (LED) and a manufacturing method thereof. In some examples, by etching the channel between adjacent light-emitting units, making the high reflection layer at the bottom of the channel, and producing interference fringes through the high reflection layer, and the side of the LED is exposed by using the interference fringes, thereby forming the structure of the groove and the protrusion on the side of the LED. Further, the width of the bottom of the groove can be larger than the width of the opening, and a silicon dioxide layer can be provided on the surfaces of the protrusion structures, which can further improve the luminous efficiency of the LED.