The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Mar. 12, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tadayoshi Uechi, Kawasaki Kanagawa, JP;

Takashi Izumida, Kamakura Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7846 (2013.01); H01L 21/823481 (2013.01); H01L 21/823878 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes an element region, an element isolation region adjacent to the element region, a gate insulating layer provided on an upper surface of the element region, and a gate electrode including a semiconductor layer, the semiconductor layer containing boron (B) and including a portion provided on the gate insulating layer, the element isolation region including an upper portion including an upper surface of the element isolation region and a lower portion including a lower surface of the element isolation region, and the upper portion of the element isolation region applying compressive stress to a portion of the element region, which is adjacent to the upper portion of the element isolation region.


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