The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Sep. 10, 2020
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Tomoaki Inokuchi, Yokohama Kanagawa, JP;

Hiro Gangi, Ota Tokyo, JP;

Yusuke Kobayashi, Nagareyama Chiba, JP;

Kentaro Ikeda, Kawasaki Kanagawa, JP;

Tatsunori Sakano, Shinagawa Tokyo, JP;

Ryosuke Iijima, Setagaya Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/18 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/187 (2013.01); H01L 29/407 (2013.01); H01L 29/7827 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first, and second conductive members, first, second, and third semiconductor regions, and an insulating part. A direction from the first conductive member toward the second conductive member is along a first direction. The first semiconductor region includes first and second partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The first conductive member is between the first partial region and the second conductive member. A direction from the second partial region toward the second semiconductor region is along the first direction. A direction from the second conductive member toward the second semiconductor region is along the second direction. The third semiconductor region is between the second partial region and the second semiconductor region. The insulating part includes a first insulating region, a second insulating region, and a third insulating region.


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