The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Jul. 29, 2020
Applicant:

Nxp B.v., San Jose, CA (US);

Inventors:

Chunshan Yin, Singapore, SG;

Cheong Min Hong, Singapore, SG;

Yu Chen, Singapore, SG;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01L 21/3105 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/31053 (2013.01); H01L 23/3192 (2013.01);
Abstract

An integrated circuit having a fingered capacitor with multiple metal fingers formed in inverted-trapezoid-shaped trenches in a multi-layer structure having a polish stop layer over an ultra-low-K dielectric layer over a low-K dielectric layer over a dielectric cap layer. The ultra-low-K dielectric layer reduces capacitance variations between the fingers, while the polish stop layer prevents metal height variations that would otherwise result from performing CMP directly on the ultra-low-K dielectric layer. The layered structure may include another low-K dielectric layer over the polish stop layer that provides a soft landing for the CMP. The polish stop layer may be removed after the CMP polishing and another ultra-low-K dielectric layer may be formed to encapsulate the tops of the metal fingers in the ultra-low-K dielectric material.


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