The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

May. 24, 2019
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Guoying Wang, Beijing, CN;

Zhen Song, Beijing, CN;

Yicheng Lin, Beijing, CN;

Ling Wang, Beijing, CN;

Cuili Gai, Beijing, CN;

Pan Xu, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 5/00 (2006.01); H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3227 (2013.01); H01L 27/1225 (2013.01); H01L 27/322 (2013.01); H01L 27/3244 (2013.01); H01L 51/5228 (2013.01); H01L 51/5234 (2013.01); H01L 51/5284 (2013.01); H01L 51/56 (2013.01); H01L 2251/303 (2013.01);
Abstract

The present disclosure provides an optical sensor, a manufacturing method thereof, a display device, and a display apparatus, and relates to the display technology. The optical sensor includes a thin film transistor and a PIN diode on a surface of a drain of the thin film transistor. A material of a P region of the PIN diode, a material of an I region of the PIN diode, and a material of an N region of the PIN diode are oxides. Since the PIN diode is made of oxides rather than amorphous silicon, hydrogen is not introduced. Therefore, the performance of the thin film transistor will not be affected, thereby achieving the improvement of the performance of the display device and the display effect.


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