The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Apr. 24, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Kotaro Takeda, Musashino, JP;
Kentaro Honda, Musashino, JP;
Assignee:
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01);
Abstract
To provide a photodetector that is capable of preventing breakdown caused by electrostatic discharge and with which the breakdown voltage can be expected to enhanced by at least 100 V. In the photodetector of the present invention, a Zener diode made of a germanium and a silicon is connected to a germanium photodiode (GePD). In the photodetector, a silicon substrate, a lower cladding layer, a silicon core layer, and an upper cladding layer provided in the photodiode and the Zener diode are shared by the photodiode and the Zener diode.