The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Aug. 14, 2020
Kioxia Corporation, Tokyo, JP;
Yuta Saito, Yokkaichi Mie, JP;
Shinji Mori, Nagoya Aichi, JP;
Keiichi Sawa, Yokkaichi Mie, JP;
Kazuhisa Matsuda, Yokkaichi Mie, JP;
Kazuhiro Matsuo, Kuwana Mie, JP;
Hiroyuki Yamashita, Yokkaichi Mie, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.0×10[EA/cm] or higher and 1.3×10[EA/cm] or lower.