The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Feb. 25, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wonseok Cho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A vertical memory device includes gate electrodes disposed on a substrate and spaced apart from each other in a vertical direction. A channel extends in the vertical direction and is positioned adjacent to the gate electrodes. A tunnel insulation pattern is disposed on a portion of an outer sidewall of the channel that is adjacent to each of the gate electrodes. Charge trapping pattern structures are disposed between the tunnel insulation pattern and each of the gate electrodes. Each of the charge trapping pattern structures includes upper and lower charge trapping patterns spaced apart from each other in the vertical direction. Blocking pattern structures are between the charge trapping patterns and each of the gate electrodes. A first portion of the channel that is adjacent to the tunnel insulation pattern has a thickness in a horizontal direction that is smaller than a thickness of other portions of the channel.