The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Sep. 09, 2019
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Ken Komiya, Nagoya, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/11582 (2017.01); H01L 29/45 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 21/8234 (2006.01); H01L 21/3215 (2006.01); H01L 21/321 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/3215 (2013.01); H01L 21/32105 (2013.01); H01L 21/823475 (2013.01); H01L 29/1037 (2013.01); H01L 29/458 (2013.01); H01L 29/495 (2013.01); H01L 29/4908 (2013.01); G11C 16/0483 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a semiconductor substrate; a first conductor layer provided above the semiconductor substrate and including silicon; a plurality of second conductor layers provided above first conductor layer and stacked apart from each other in the first direction; and a first pillar extending in the first direction through the second conductor layers and including intersection portions where the first pillar intersects the second conductor layer, the intersection portions each functioning as a memory cell transistor, wherein the first conductor layer includes a first region which is in contact with the first pillar and includes at least one element of arsenic (As), phosphorus (P), carbon (C), or boron (B).


Find Patent Forward Citations

Komiya, Ken. (2022). Semiconductor memory device (U.S. Patent No. 11404430). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11404430

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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