The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Jul. 13, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Tsuneo Inaba, Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); H01L 27/108 (2006.01); G11C 11/4097 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10802 (2013.01); H01L 27/10805 (2013.01); G11C 11/4091 (2013.01); G11C 11/4097 (2013.01);
Abstract

A semiconductor storage device according to the present embodiment includes a plurality of first wires provided above a surface of a semiconductor substrate to extend in a first direction, and a plurality of second wires provided above the first wires to extend in a second direction crossing the first direction. A plurality of capacitor elements are arranged every other intersection region among intersection regions between the first wires and the second wires as viewed from above the surface of the semiconductor substrate. A plurality of transistors are provided above the capacitor elements to correspond thereto, respectively. A first distance between two of the capacitor elements, which are adjacent to each other in the first direction, is narrower than a second distance between two of the capacitor elements, which are adjacent to each other in the second direction.


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