The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Mar. 17, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Munhyeon Kim, Hwaseong-si, KR;
Youngchai Jung, Anyang-si, KR;
Mingyu Kim, Hwaseong-si, KR;
Seon-Bae Kim, Hwaseong-si, KR;
Yeonho Park, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate with an active region being provided with a channel pattern, a device isolation layer including a first part defining the active region and a second part surrounding a first portion of the channel pattern, an upper epitaxial pattern disposed on an upper surface of the channel pattern, a gate electrode surrounding a second portion of the channel pattern and extending in a first direction, a gate spacer on the gate electrode, an interlayer dielectric layer on the gate spacer, and an air gap between a bottom surface of the gate electrode and the second part of the device isolation layer. At least a portion of the air gap vertically overlaps the gate electrode. The second portion of the channel pattern is higher than the first portion of the channel pattern.