Semiconductor device comprising memory semiconductor chip in which memory cell is laminated on semiconductor substrate

Abstract

This semiconductor device includes a memory semiconductor chip in which a plurality of memory cells are laminated on a semiconductor substrate, a planar buffer chip which is a semiconductor chip that comprises a plurality of buffer circuits which hold data read from the memory cell and data written to the memory cell and which output the held data in accordance with the number of bit lines of the plurality of memory cells, and an electrical connection structure which electrically connects the bit lines of the memory cells of the memory semiconductor chips and the buffer circuits of the planar buffer chips to each other in a thickness direction of the memory semiconductor chip and the planar buffer chip. The electrical connection structure electrically connects the bit lines of the plurality of memory cells in the thickness direction through a penetration electrode penetrating at least the plurality of memory cells in the thickness direction.