The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Sep. 14, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Toshiyuki Morita, Yokkaichi, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 23/522 (2006.01); H01L 27/11529 (2017.01); H01L 27/11573 (2017.01); H01L 21/768 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11529 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract
A semiconductor device according to an embodiment includes: a semiconductor substrate having a diffusion region including an impurity; and a contact provided on the diffusion region. The contact includes a metal film, a barrier metal film covering the metal film, and a conductive film provided between the barrier metal film and the diffusion region and including a conductive material having a higher heat of formation than a heat of formation of the barrier metal film.