The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Jul. 23, 2020
Nexchip Semiconductor Co., Ltd, Anhui, CN;
Nexchip Semiconductor Co., LTD, Hefei, CN;
Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. The method includes: preparing a semiconductor substrate; sequentially forming an oxide layer and a sacrificial layer on the semiconductor substrate, the thickness of the oxide layer is a first thickness; forming a plurality of trenches in the semiconductor substrate, wherein the trenches extending from the sacrificial layer into the semiconductor substrate; forming an isolation dielectric layer on the plurality of trenches and the sacrificial layer, and removing the isolation dielectric layer on the sacrificial layer to form a plurality of isolation structures; forming a well region in the semiconductor substrate; processing the oxide layer by an etching process, so that the thickness of the oxide layer is equal to a second thickness, the first thickness is greater than the second thickness; and forming a polysilicon gate on the etched oxide layer.