The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Nov. 30, 2018
Texas Instruments Incorporated, Dallas, TX (US);
Benjamin Stassen Cook, Addison, TX (US);
Daniel Lee Revier, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A microelectronic device is formed by forming at least a portion of a substrate of the microelectronic device by one or more additive processes. The additive processes may be used to form semiconductor material of the substrate. The additive processes may also be used to form dielectric material structures or electrically conductive structures, such as metal structures, of the substrate. The additive processes are used to form structures of the substrate which would be costly or impractical to form using planar processes. In one aspect, the substrate may include multiple doped semiconductor elements, such as wells or buried layers, having different average doping densities, or depths below a component surface of the substrate. In another aspect, the substrate may include dielectric isolation structures with semiconductor material extending at least partway over and under the dielectric isolation structures. Other structures of the substrate are disclosed.