The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
Nov. 08, 2019
Infineon Technologies Ag, Neubiberg, DE;
Sophia Friedler, Villach, AT;
Bernhard Goller, Villach, AT;
Iris Moder, Villach, AT;
Ingo Muri, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method includes: in a semiconductor wafer including a first semiconductor layer and a second semiconductor layer adjoining the first semiconductor layer, forming a porous region extending from a first surface into the first semiconductor layer; and removing the porous region by an etching process, wherein a doping concentration of the second semiconductor layer is less than 10times a doping concentration of the first semiconductor layer and/or a doping type of the second semiconductor layer is complementary to a doping type of the first semiconductor layer.