The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Jun. 18, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Aswani Krishna Lakshminarayana Addagalla, Bangalore, IN;

Sridhar Yadala, Bengaluru, IN;

Pradeep Anantula, Bangalore, IN;

Sivakumar Grandhi, Bangalore, IN;

V.S.N.K.Chaitanya G, Bangalore, IN;

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/44 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 29/12 (2006.01); G11C 5/14 (2006.01); G11C 29/50 (2006.01); G01R 31/52 (2020.01); G01R 31/3842 (2019.01); G11C 13/00 (2006.01); G01R 19/25 (2006.01); G01R 19/165 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G01R 19/16528 (2013.01); G01R 19/25 (2013.01); G01R 19/2509 (2013.01); G01R 31/3842 (2019.01); G01R 31/52 (2020.01); G11C 5/063 (2013.01); G11C 5/145 (2013.01); G11C 5/147 (2013.01); G11C 13/0028 (2013.01); G11C 29/50 (2013.01); G11C 2029/1202 (2013.01); G11C 2029/5006 (2013.01);
Abstract

An apparatus and method for detecting leakage current in a non-volatile memory array. A reference current is connected to a leakage detection circuit. A reference code is determined for the leakage detection circuit coupled to a switching circuit. The reference code establishes a leakage current threshold. The reference current is disconnected from the leakage detection circuit and the switching circuit. Next, the leakage detection circuit is connected to a set of word lines of a storage block of a non-volatile memory array by way of the switching circuit. A memory current is generated within the set of word lines. A leakage code is determined for the set of word lines representing leakage current from the word lines in response to the memory current. The leakage code is compared with the reference code. If the leakage code exceeds the reference code, the storage block is deemed unusable.


Find Patent Forward Citations

Loading…