The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2022
Filed:
May. 03, 2021
SK Hynix Inc., Gyeonggi-do, KR;
Korea University Research and Business Foundation, Sejong Campus, Sejong-si, KR;
Jae Woo Lee, Sejong-si, KR;
Soo Hyun Kim, Sejong-si, KR;
Dong Hyun Kim, Sejong-si, KR;
Dong Geun Park, Sejong-si, KR;
Geun Soo Yang, Sejong-si, KR;
Jung Chun Kim, Sejong-si, KR;
Sae Yan Choi, Sejong-si, KR;
SK hynix Inc., Gyeonggi-do, KR;
Korea University Research and Business Foundation, Seiong Campus, Sejong-si, KR;
Abstract
A method for measuring interference in a memory device is provided. The method includes: programming a selected memory cell among a plurality of memory cells connected in series between a bit line and a source line; measuring a first noise value of the programmed selected memory cell; programming an adjacent memory cell adjacent to the selected memory cell among the plurality of memory cells; measuring a second noise value of the selected memory cell, after the programming of the adjacent memory cell is completed; and determining interference on the selected memory cell based on the first noise value and the second noise value. The first noise value and the second noise value are measured by detecting a low frequency noise of a cell current of the selected memory cell.