The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2022

Filed:

Jun. 11, 2018
Applicant:

Nitto Denko Corporation, Ibaraki, JP;

Inventors:

Toru Iseki, Ibaraki, JP;

Kazumichi Kato, Ibaraki, JP;

Hideyuki Tokuyama, Ibaraki, JP;

Mitsuhiro Kanada, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09J 183/04 (2006.01); C08J 9/30 (2006.01); C08J 9/00 (2006.01); C09J 11/04 (2006.01); C09J 7/38 (2018.01);
U.S. Cl.
CPC ...
C09J 183/04 (2013.01); C08J 9/0066 (2013.01); C08J 9/30 (2013.01); C09J 11/04 (2013.01); C08J 2205/05 (2013.01); C08J 2383/05 (2013.01); C09J 7/38 (2018.01);
Abstract

Provided is an adsorption temporary fixing sheet having a sufficient shear adhesive strength in a direction parallel to its surface, having a weak adhesive strength in a direction vertical to the surface, and having excellent antistatic performance. The adsorption temporary fixing sheet includes a foam layer including an open-cell structure, and has a surface resistivity of from 1.0×10to 1.0×10Ω/□, wherein, when a silicon chip vertical adhesive strength of a surface of the foam layer after 18 hours at each of such different temperatures as −30° C., 23° C., or 80° C. is represented by V1, V2, or V3 (N/1 cm), and when a silicon chip shearing adhesive strength of the surface of the foam layer after 18 hours at each of such different temperatures as −30° C., 23° C., or 80° C. is represented by H1, H2, or H3 (N/1 cm□), relationships of V1<H1, V2<H2, and V3<H3 are satisfied.


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